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Investigation of electromigration in In2Se3 nanowire for phase change memory devices

Title
Investigation of electromigration in In2Se3 nanowire for phase change memory devices
Authors
Kang, DRim, TBaek, CKMeyyappan, MLee, JS
POSTECH Authors
Baek, CKLee, JS
Date Issued
Dec-2013
Publisher
AIP
Abstract
The decomposition of In2Se3 nanowire phase change memory devices during current-driving operation was investigated. The devices were subjected to thermal/electrical stress with current density and electric field during the reset operation at 0.24-0.38 MA/cm(2) and 5.3-6.4 kV/cm, respectively. After multiple operation cycles, a change in morphology and composition of the In2Se3 nanowire was observed and led to the device failure. The transmission electron microscopy and energy dispersive analysis indicate that electromigration causes the catastrophic failure by void formation where In atoms migrate toward the cathode and Se atoms migrate toward the anode depending on their electronegativities. (C) 2013 AIP Publishing LLC.
URI
http://oasis.postech.ac.kr/handle/2014.oak/15246
DOI
10.1063/1.4838755
ISSN
0003-6951
Article Type
Article
Citation
Applied Physics Letters, vol. 103, no. 23, page. 233504-1 - 233504-4, 2013-12
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 LEE, JEONG SOO
Dept of Electrical Enginrg
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