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Cited 28 time in webofscience Cited 30 time in scopus
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Complementary Resistive Switching in Niobium Oxide-Based Resistive Memory Devices

Title
Complementary Resistive Switching in Niobium Oxide-Based Resistive Memory Devices
Authors
Liu, XSadaf, SMPark, SKim, SCha, ELee, DJung, GYHwang, H
POSTECH Authors
Hwang, H
Date Issued
Feb-2013
Publisher
Institute of Electrical and Electronics Engineers Inc..
Keywords
Complementary resistive switch (CRS); crossbar array; nonvolatile memory; resistive memory; resistive random access memory (RRAM)
URI
http://oasis.postech.ac.kr/handle/2014.oak/14937
DOI
10.1109/LED.2012.2235816
ISSN
0741-3106
Article Type
Article
Citation
IEEE Electron Device Letters, vol. 34, no. 2, page. 235 - 237, 2013-02
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 HWANG, HYUNSANG
Dept of Materials Science & Enginrg
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