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Defect Engineering Using Bilayer Structure in Filament-Type RRAM
- Title
- Defect Engineering Using Bilayer Structure in Filament-Type RRAM
- POSTECH Authors
- Hwang, H
- Date Issued
- Oct-2013
- Publisher
- Institute of Electrical and Electronics Engineers Inc.
- Keywords
- Bilayer; defect engineering; interface engineering; low-power operation; resistive random access memory (RRAM); MODEL
- ISSN
- 0741-3106
- Article Type
- Article
- Citation
- IEEE Electron Device Letters, vol. 34, no. 10, page. 1250 - 1252, 2013-10
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Related Researcher
- HWANG, HYUNSANG
- Dept of Materials Science & Enginrg