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Defect Engineering Using Bilayer Structure in Filament-Type RRAM

Title
Defect Engineering Using Bilayer Structure in Filament-Type RRAM
Authors
Lee, DWoo, JCha, EPark, SLee, SPark, JHwang, H
POSTECH Authors
Hwang, H
Date Issued
Oct-2013
Publisher
Institute of Electrical and Electronics Engineers Inc.
Keywords
Bilayer; defect engineering; interface engineering; low-power operation; resistive random access memory (RRAM); MODEL
URI
http://oasis.postech.ac.kr/handle/2014.oak/14930
DOI
10.1109/LED.2013.2279009
ISSN
0741-3106
Article Type
Article
Citation
IEEE Electron Device Letters, vol. 34, no. 10, page. 1250 - 1252, 2013-10
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 HWANG, HYUNSANG
Dept of Materials Science & Enginrg
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