다른 기판온도에서 증착된 비정질 In-Ga-Zn-O 박막의 특성 연구
- 다른 기판온도에서 증착된 비정질 In-Ga-Zn-O 박막의 특성 연구
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- The optical, electrical and chemical properties of amorphous indium gallium zinc oxide (a-IGZO) thin films deposited at different substrate temperatures by radio frequency (RF) magnetron sputtering were investigated.
As substrate temperature increased from room temperature to 300°C, carrier concentration increased, mobility and conductivity decreased. All films showed high transparency with average transmittance about 85% compared to that of substrate in visible region (400 nm ~ 800nm). Transmittance in short wavelength region ( 350nm) and optical bandgap decreased as substrate temperature increased.
O 1s core level and Ga 3d, In 3d and Zn 3d shallow-core levels were investigated by high-resolution x-ray photoelectron spectroscopy using synchrotron radiation. The intensity of In 3d peak compared to Ga 3d peak increased but the intensity of Zn 3d peak compared to Ga 3d decreased as substrate temperature increased. Deconvoluted O 1s peak indicated an increase of defect, non-quaternary contents and oxygen vacancies, which might explain the increase of carrier concentration and the decrease of mobility.
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