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Cited 13 time in webofscience Cited 15 time in scopus
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Effect of Quantum Barrier Thickness in the Multiple-Quantum-Well Active Region of GaInN/GaN Light-Emitting Diodes

Title
Effect of Quantum Barrier Thickness in the Multiple-Quantum-Well Active Region of GaInN/GaN Light-Emitting Diodes
Authors
Guan-Bo LinDong-Yeong KimQifeng ShanJaehee ChoE. Fred SchubertHyunwook ShimCheolsoo SoneKim, JK
POSTECH Authors
Kim, JK
Date Issued
Aug-2013
Publisher
IEEE
Keywords
Light emitting diode; gallium nitride; efficiency droop
URI
http://oasis.postech.ac.kr/handle/2014.oak/14643
DOI
10.1109/JPHOT.2013.2276758
ISSN
1943-0655
Article Type
Article
Citation
Photonics Journal, IEEE, vol. 5, no. 4, 2013-08
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 KIM, JONG KYU
Dept of Materials Science & Enginrg
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