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Cited 3 time in webofscience Cited 3 time in scopus
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Ohmic contacts to N-face p-GaN using Ni/Au for the fabrication of polarization inverted light-emitting diodes

Title
Ohmic contacts to N-face p-GaN using Ni/Au for the fabrication of polarization inverted light-emitting diodes
Authors
Seung Cheol HanKim, JKJun Young KimDong Min LeeJae-Sik YoonKim, JKE. Fred SchubertJi-Myon Lee
POSTECH Authors
Kim, JK
Date Issued
Aug-2013
Publisher
American Scientific Publishers
Keywords
N-Face p-GaN; LED; Surface Treatment; XPS; SINGLE-CRYSTAL GAN; SURFACE-TREATMENT; LOW-RESISTANCE
URI
http://oasis.postech.ac.kr/handle/2014.oak/14610
DOI
10.1166/JNN.2013.7072
ISSN
1533-4880
Article Type
Article
Citation
Journal of Nanoscience and Nanotechnology, vol. 13, no. 8, page. 5715 - 5718, 2013-08
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 KIM, JONG KYU
Dept of Materials Science & Enginrg
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