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Ga-doped indium oxide nanowire phase change random access memory cells

Title
Ga-doped indium oxide nanowire phase change random access memory cells
Authors
Jin, BTaekyung LimSanghyun JuMarat I. LatypovKim, HSMeyya MeyyappanJeong-Soo Lee
POSTECH Authors
Kim, HS
Date Issued
Feb-2014
Publisher
Institute of Physics (IOP) Publishing
Abstract
Phase change random access memory (PCRAM) devices are usually constructed using tellurium based compounds, but efforts to seek other materials providing desirable memory characteristics have continued. We have fabricated PCRAM devices using Ga-doped In2O3 nanowires with three different Ga compositions (Ga/(In + Ga) atomic ratio: 2.1%, 11.5% and 13.0%), and investigated their phase switching properties. The nanowires (similar to 40 nm in diameter) can be repeatedly switched between crystalline and amorphous phases, and Ga concentration-dependent memory switching behavior in the nanowires was observed with ultra-fast set/reset rates of 80 ns/20 ns, which are faster than for other competitive phase change materials. The observations of fast set/reset rates and two distinct states with a difference in resistance of two to three orders of magnitude appear promising for nonvolatile information storage. Moreover, we found that increasing the Ga concentration can reduce the power consumption and resistance drift
however, too high a level of Ga doping may cause difficulty in achieving the phase transition.
Keywords
phase change random access memory; Ga-doped In2O3 nanowire; crystalline; amorphous; IN2O3 NANOWIRES; DRIVEN; NONVOLATILE; TECHNOLOGY; FILM
URI
http://oasis.postech.ac.kr/handle/2014.oak/14582
DOI
10.1088/0957-4484/25/5/055205
ISSN
0957-4484
Article Type
Article
Citation
NANOTECHNOLOGY, vol. 25, no. 5, 2014-02
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 KIM, HYOUNG SEOP
Dept of Materials Science & Enginrg
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