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Cited 13 time in webofscience Cited 15 time in scopus
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Improved Electrical Characteristics of Honeycomb-Nanowire ISFETs

Title
Improved Electrical Characteristics of Honeycomb-Nanowire ISFETs
Authors
Rim, TKim, KKim, SBaek, CKMeyyappan, MJeong, YHLee, JS
POSTECH Authors
Baek, CKJeong, YH
Date Issued
Aug-2013
Publisher
IEEE
Abstract
Ion-sensitive field-effect transistors (ISFETs) with a honeycomb nanowire (HCNW) structure have been fabricated on a silicon-on-insulator wafer. The HCNW ISFET shows lower threshold voltage, lower subthreshold swing, higher drain current, and lower variability than the conventional nanowire device. Improved electrical characteristics are mainly due to the increased effective channel width and enhanced current drivability. The HCNW structure also exhibits improved current sensitivity in its pH response. These results suggest that the HCNW structure is promising for enhancing device performance and realizing sensors with high sensitivity.
URI
http://oasis.postech.ac.kr/handle/2014.oak/14547
DOI
10.1109/LED.2013.2265391
ISSN
0741-3106
Article Type
Article
Citation
IEEE ELECTRON DEVICE LETTERS, vol. 34, no. 8, page. 1059 - 1061, 2013-08
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 JEONG, YOON HA
Dept of Electrical Enginrg
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