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(111)-Oriented Pb(Zr0.52Ti0.48)O-3 thin film on Pt(111)/Si substrate using CoFe2O4 nano-seed layer by pulsed laser deposition

Title
(111)-Oriented Pb(Zr0.52Ti0.48)O-3 thin film on Pt(111)/Si substrate using CoFe2O4 nano-seed layer by pulsed laser deposition
Authors
Khodaei, MEbrahimi, SASPark, YJSong, SJang, HMSon, JBaik, S
POSTECH Authors
Jang, HM
Date Issued
Oct-2013
Publisher
Springer
Abstract
Perovskite Pb(Zr0.52Ti0.48)O-3 (PZT) thin film with perfect (111)-orientation was achieved on CoFe2O4 seeded-Pt(111)/Ti/SiO2/Si substrate by pulsed laser deposition technique using target with limited excess Pb. Pyrochlore phase formation was suppressed on Pt by CoFe2O4 nano-seed layer (similar to 7 nm), and perovskite PZT was achieved at temperature as low as 550 A degrees C. CoFe2O4 seed layer that has perfect (111)-orientation acts as a promoter for perfectly (111)-orientated growth of PZT. PZT film grown at 600 A degrees C has higher degree of crystalline orientation, lower surface roughness, and compacted microstructure in comparison to the film grown at 550 A degrees C. The PZT film has a nano-size grain-feature structure with grain size of about 40-60 nm. Perovskite formation was also confirmed by ferroelectric measurement. The ferroelectric properties of PZT film grown at 600 A degrees C is higher than that grown at 550 A degrees C which could be attributed to the enhancement of the crystalline orientation, crystallinity, and microstructure of the film.
Keywords
CHEMICAL-VAPOR-DEPOSITION; ELECTRICAL-PROPERTIES; PB(ZR,TI)O-3 CAPACITORS; GROWTH; PHASE; CRYSTALLIZATION; ORIENTATION; THICKNESS; SPINEL; PB(ZR
URI
http://oasis.postech.ac.kr/handle/2014.oak/14160
DOI
10.1007/S10854-013-1311-2
ISSN
0957-4522
Article Type
Article
Citation
Journal of Materials Science: Materials in Electronics, vol. 24, no. 10, page. 3736 - 3743, 2013-10
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 JANG, HYUN MYUNG
Div of Advanced Materials Science
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