Open Access System for Information Sharing

Login Library

 

Article
Cited 1 time in webofscience Cited 0 time in scopus
Metadata Downloads

Selective epitaxial growth of Si1-xGex films via the alternating gas supply of Si2H6, GeH4, and Cl-2: Effects of Cl-2 exposure

Title
Selective epitaxial growth of Si1-xGex films via the alternating gas supply of Si2H6, GeH4, and Cl-2: Effects of Cl-2 exposure
Authors
Park, SJBaik, SKim, H
POSTECH Authors
Kim, H
Date Issued
Dec-2012
Publisher
ELSEVIER SCIENCE BV
Abstract
Si1-xGex films were epitaxially grown on Si(001) substrates at various ratios of flow rates of Si2H6 and GeH4. Si1-xGex films were also selectively grown on Si windows through modified alternating gas supply manner, repeating the unit cycle which consists of the Si1-xGex growth step and Cl-2 exposure step. Injection of Cl-2 enhanced the selectivity of the selective growth of Si1-xGex by etching away the spurious nuclei or deposits formed on oxide area. The separate addition of Cl-2 resulted in decrease of the growth rate and Ge concentration of Si1-xGex film. Meanwhile, Ge concentration in Si1-xGex films was insignificantly affected by the variation of the flow rates and exposure durations of Cl-2. (C) 2012 Elsevier B.V. All rights reserved.
Keywords
Si1-xGex film; Selective epitaxial growth; Cl-2 exposure; CHEMICAL-VAPOR-DEPOSITION; SILICON-GERMANIUM; CHLORINE; SIGE; TEMPERATURE; HETEROSTRUCTURES; ADSORPTION; DEPENDENCE; KINETICS; SI(100)
URI
http://oasis.postech.ac.kr/handle/2014.oak/13927
DOI
10.1016/J.MATLET.2012.08.036
ISSN
0167-577X
Article Type
Article
Citation
MATERIALS LETTERS, vol. 88, page. 89 - 92, 2012-12
Files in This Item:
There are no files associated with this item.

qr_code

  • mendeley

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

Related Researcher

Researcher

 KIM, HYUNGJUN
Dept of Materials Science & Enginrg
Read more

Views & Downloads

Browse