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Highly Non-Linear Nitrogen Doped ZnO Based Selector Device for Cross-Point Array

Title
Highly Non-Linear Nitrogen Doped ZnO Based Selector Device for Cross-Point Array
Authors
Tamanna, NMisha, SHPrakash, ASong, JLee, DWoo, JPark, JHwang, H
POSTECH Authors
Park, JHwang, H
Date Issued
Jan-2014
Publisher
ELECTROCHEMICAL SOC INC
Abstract
In this study, we demonstrate a systematic way to obtain a bidirectional selector for cross point Resistive Random Access Memory (ReRAM) application by engineering material's properties. The nitrogen doping can control carrier density and increase electrical resistivity of zinc oxide. By introducing nitrogen at the both ends of ZnO film, Pt/N-ZnO/ZnO/N-ZnO/Pt structure was fabricated which exhibits very stable selector characteristics. An intensive analysis was performed to analyse the effect of nitrogen percentage and the thickness of N-ZnO on selector characteristics. (C) 2014 The Electrochemical Society. All rights reserved.
URI
http://oasis.postech.ac.kr/handle/2014.oak/13862
DOI
10.1149/2.0031411SS1
ISSN
2162-8742
Article Type
Article
Citation
ECS SOLID STATE LETTERS, vol. 3, no. 11, page. P136 - P139, 2014-01
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 HWANG, HYUNSANG
Dept of Materials Science & Enginrg
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