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Cited 46 time in webofscience Cited 47 time in scopus
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N-Doped Graphene Field-Effect Transistors with Enhanced Electron Mobility and Air-Stability

Title
N-Doped Graphene Field-Effect Transistors with Enhanced Electron Mobility and Air-Stability
Authors
Xu, WLim, TSSeo, HKMin, SYCho, HPark, MHKim, YHLee, TW
POSTECH Authors
Lee, TW
Date Issued
May-2014
Publisher
WILEY-V C H VERLAG GMBH
Keywords
n-type doping; graphene field-effect transistor; carrier mobility; dirac point; MOLECULAR CHARGE-TRANSFER; LIGHT-EMITTING-DIODES; TRANSPARENT ELECTRODES; CARBON NANOTUBES; RECENT PROGRESS; LAYER GRAPHENE; WORK-FUNCTION; NANORIBBONS; GROWTH; FABRICATION
URI
http://oasis.postech.ac.kr/handle/2014.oak/13840
DOI
10.1002/SMLL.201303768
ISSN
1613-6810
Article Type
Article
Citation
SMALL, vol. 10, no. 10, page. 1999 - 2005, 2014-05
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 LEE, TAE WOO
Dept of Materials Science & Enginrg
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