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비정질 인듐-갈륨-아연 산화물 반도체 박막 트랜지스터의 유기 절연층 표면과 무기

Title
비정질 인듐-갈륨-아연 산화물 반도체 박막 트랜지스터의 유기 절연층 표면과 무기
Authors
박미정
Date Issued
2012
Publisher
포항공과대학교
Abstract
We have investigated the influence of organic dielectric surfaces on the electric characteristics of the inorganic amorphous indium-gallium-zinc oxide (a-IGZO) based thin film transistors (TFTs). To modify the dielectric surface, various self-assembled monolayers and polymer thin-films which have different functional groups were introduced. The electrical measurement of the a-IGZO TFTs using surface-modified gate dielectrics revealed that threshold voltages shift to positive direction as surface functional groups attract more electrons in a-IGZO thin-films. These results indicate that the channel conductance and carrier density of a-IGZO TFTs can be tuned by simple modification of dielectric surface with organic materials. Furthermore, based on the interface analysis, we fabricated the bottom-gate a-IGZO TFTs with the polymer gate dielectric showing good electric characteristics.
URI
http://postech.dcollection.net/jsp/common/DcLoOrgPer.jsp?sItemId=000001216216
http://oasis.postech.ac.kr/handle/2014.oak/1373
Article Type
Thesis
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