비정질 인듐-갈륨-아연 산화물 반도체 박막 트랜지스터의 유기 절연층 표면과 무기
- 비정질 인듐-갈륨-아연 산화물 반도체 박막 트랜지스터의 유기 절연층 표면과 무기
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- We have investigated the influence of organic dielectric surfaces on the electric characteristics of the inorganic amorphous indium-gallium-zinc oxide (a-IGZO) based thin film transistors (TFTs). To modify the dielectric surface, various self-assembled monolayers and polymer thin-films which have different functional groups were introduced. The electrical measurement of the a-IGZO TFTs using surface-modified gate dielectrics revealed that threshold voltages shift to positive direction as surface functional groups attract more electrons in a-IGZO thin-films. These results indicate that the channel conductance and carrier density of a-IGZO TFTs can be tuned by simple modification of dielectric surface with organic materials. Furthermore, based on the interface analysis, we fabricated the bottom-gate a-IGZO TFTs with the polymer gate dielectric showing good electric characteristics.
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