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Effects of High-Pressure Hydrogen Annealing on the Formation of Conducting Filaments in Filament-Type Resistive Random-Access Memory

Title
Effects of High-Pressure Hydrogen Annealing on the Formation of Conducting Filaments in Filament-Type Resistive Random-Access Memory
Authors
Lee, DWoo, JCha, ELee, SHwang, H
POSTECH Authors
Hwang, H
Date Issued
Sep-2014
Publisher
Springer
Keywords
ReRAM; conducting filament; high-pressure hydrogen annealing; filament overformation; TECHNOLOGY
URI
http://oasis.postech.ac.kr/handle/2014.oak/13589
DOI
10.1007/S11664-014-3265-4
ISSN
0361-5235
Article Type
Article
Citation
JOURNAL OF ELECTRONIC MATERIALS, vol. 43, no. 9, page. 3635 - 3639, 2014-09
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 HWANG, HYUNSANG
Dept of Materials Science & Enginrg
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