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Cited 20 time in webofscience Cited 20 time in scopus
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Structurally Engineered Stackable and Scalable 3D Titanium-oxide Switching devices for High-density Nanoscale Memory

Title
Structurally Engineered Stackable and Scalable 3D Titanium-oxide Switching devices for High-density Nanoscale Memory
Authors
Lee, DPark, JPark, JWoo, JCha, ELee, SMoon, KSong, JKoo, YHwang, H
POSTECH Authors
Hwang, H
Date Issued
Jan-2015
Publisher
Wiley-VCH Verlag
Keywords
NONVOLATILE MEMORY; PERFORMANCE; TRANSITION; NANOCROSSBAR; MECHANISM; ENDURANCE
URI
http://oasis.postech.ac.kr/handle/2014.oak/13585
DOI
10.1002/ADMA.201403675
ISSN
0935-9648
Article Type
Article
Citation
ADVANCED MATERIALS, vol. 27, no. 1, page. 59 - 64, 2015-01
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 HWANG, HYUNSANG
Dept of Materials Science & Enginrg
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