Open Access System for Information Sharing

Login Library

 

Article
Cited 933 time in webofscience Cited 965 time in scopus
Metadata Downloads

MoS2 Nanosheet Phototransistors with Thickness-Modulated Optical Energy Gap

Title
MoS2 Nanosheet Phototransistors with Thickness-Modulated Optical Energy Gap
Authors
Lee, HSMin, SWChang, YGPark, MKNam, TKim, HKim, JHRyu, SIm, S
Date Issued
Jul-2012
Publisher
AMERICAN CHEMICAL SOCIETY
Abstract
We report on the fabrication of top-gate phototransistors based on a few-layered MoS2 nanosheet with a transparent gate electrode. Our devices with triple MoS2 layers exhibited excellent photodetection capabilities for red light, while those with single- and double-layers turned out to be quite useful for green light detection. The varied functionalities are attributed to energy gap modulation by the number of MoS2 layers. The photoelectric probing on working transistors with the nanosheets demonstrates that single-layer MoS2 has a significant energy bandgap of 1.8 eV, while those of double- and triple-layer MoS2 reduce to 1.65 and 1.35 eV, respectively.
URI
http://oasis.postech.ac.kr/handle/2014.oak/13548
ISSN
1530-6984
Article Type
Article
Citation
NANO LETTERS, vol. 12, no. 7, page. 3695 - 3700, 2012-07
Files in This Item:
There are no files associated with this item.

qr_code

  • mendeley

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

Related Researcher

Researcher

류순민RYU, SUNMIN
Dept of Chemistry
Read more

Views & Downloads

Browse