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Cited 7 time in webofscience Cited 9 time in scopus
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Tuning doping and strain in graphene by microwave-induced annealing

Title
Tuning doping and strain in graphene by microwave-induced annealing
Authors
Kim, YCho, DHRyu, SLee, C
Date Issued
Feb-2014
Publisher
ELSEVIER SCIENCE BV
Abstract
We propose microwave-induced annealing as a rapid, simple, and effective method of controlling surface doping and strain in graphene. Raman spectroscopy was used to confirm that heavy and uniform p-type (1.2 x 10(13) cm(-2)) doping can be achieved within only 5 min without unintended defects by placing graphene onto a substrate with a sufficiently high dielectric constant and exposing graphene and its substrate to microwave irradiation. Further, we showed that ripples are formed in suspended graphene when it is exposed to microwave irradiation. Silicon has a sufficiently high dielectric constant (11.9) and graphene is commonly deposited on silicon-based substrates, so our. proposed microwave-induced annealing technique can be used for the rapid manipulation of the properties of graphene at low cost. (C) 2013 Elsevier Ltd. All rights reserved.
URI
http://oasis.postech.ac.kr/handle/2014.oak/13544
ISSN
0008-6223
Article Type
Article
Citation
CARBON, vol. 67, page. 673 - 679, 2014-02
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류순민RYU, SUNMIN
Dept of Chemistry
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