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Cited 9 time in webofscience Cited 8 time in scopus
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Solution-processed n-type fullerene field-effect transistors prepared using CVD-grown graphene electrodes: improving performance with thermal annealing

Title
Solution-processed n-type fullerene field-effect transistors prepared using CVD-grown graphene electrodes: improving performance with thermal annealing
Authors
Jeong, YJYun, DJJang, JPark, SAn, TKKim, LHKim, SHPark, CE
POSTECH Authors
Park, CE
Date Issued
Jan-2015
Publisher
ROYAL SOC CHEMISTRY
Keywords
SELF-ASSEMBLED MONOLAYERS; SEMICONDUCTOR THIN-FILMS; ORGANIC SEMICONDUCTOR; INTERFACE; TRANSPORT; MOLECULE; MOBILITY; C-6 INJECTION; ENERGY
URI
http://oasis.postech.ac.kr/handle/2014.oak/13226
DOI
10.1039/C4CP05787B
ISSN
1463-9076
Article Type
Article
Citation
PHYSICAL CHEMISTRY CHEMICAL PHYSICS, vol. 17, no. 9, page. 6635 - 6643, 2015-01
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박찬언PARK, CHAN EON
Dept. of Chemical Enginrg
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