Solution-processed n-type fullerene field-effect transistors prepared using CVD-grown graphene electrodes: improving performance with thermal annealing
- Title
- Solution-processed n-type fullerene field-effect transistors prepared using CVD-grown graphene electrodes: improving performance with thermal annealing
- Authors
- Jeong, YJ; Yun, DJ; Jang, J; Park, S; An, TK; Kim, LH; Kim, SH; Park, CE
- POSTECH Authors
- Park, CE
- Date Issued
- Jan-2015
- Publisher
- ROYAL SOC CHEMISTRY
- Keywords
- SELF-ASSEMBLED MONOLAYERS; SEMICONDUCTOR THIN-FILMS; ORGANIC SEMICONDUCTOR; INTERFACE; TRANSPORT; MOLECULE; MOBILITY; C-6 INJECTION; ENERGY
- URI
- http://oasis.postech.ac.kr/handle/2014.oak/13226
- DOI
- 10.1039/C4CP05787B
- ISSN
- 1463-9076
- Article Type
- Article
- Citation
- PHYSICAL CHEMISTRY CHEMICAL PHYSICS, vol. 17, no. 9, page. 6635 - 6643, 2015-01
- Files in This Item:
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