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Cited 15 time in webofscience Cited 16 time in scopus
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Thermally stable AlGaN/GaN heterostructure field-effect transistor with IrO2 gate electrode

Title
Thermally stable AlGaN/GaN heterostructure field-effect transistor with IrO2 gate electrode
Authors
Jeon, CMPark, KYLee, JHLee, JHLee, JL
POSTECH Authors
Lee, JL
Date Issued
Jan-2006
Publisher
A V S AMER INST PHYSICS
URI
http://oasis.postech.ac.kr/handle/2014.oak/11287
DOI
10.1116/1.2200374
ISSN
1071-1023
Article Type
Article
Citation
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, vol. 24, no. 3, page. 1303 - 1307, 2006-01
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 LEE, JONG LAM
Dept of Materials Science & Enginrg
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