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Dry etching of ZnO films and plasma-induced damage to optical properties

Title
Dry etching of ZnO films and plasma-induced damage to optical properties
Authors
Park, JSPark, HJHahn, YBYi, GCYoshikawa, A
POSTECH Authors
Yi, GC
Date Issued
Jan-2003
Publisher
A V S AMER INST PHYSICS
Abstract
To study the effects of plasma chemistries on etch characteristics. and plasma-induced damage to the optical properties, dry etching of ZnO films has been carried out using inductively coupled plasmas of Cl-2 /Ar, Cl-2 /H-2 /Ar, and CH4 /H-2 /Ar. The CH4 /H-2 /Ar chemistry showed a faster etch rate and a better surface morphology than the Cl-2-based chemistries. Etched samples in all chemistries showed a substantial decrease in the PL intensity of band-edge luminescence mainly due to the plasma-induced damage. The CH4 /H-2 /Ar chemistry showed the least degradation of the optical properties. (C) 2003 American Vacuum Society. [DOI: 10.1116/1.1563252].
URI
http://oasis.postech.ac.kr/handle/2014.oak/11265
DOI
10.1116/1.1563252
ISSN
1071-1023
Article Type
Article
Citation
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, vol. 21, no. 2, page. 800 - 803, 2003-01
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 YI, GYU CHUL
Dept of Materials Science & Enginrg
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