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Atomic Layer Deposition of Ni Thin Films and Application to Area-Selective Deposition

Title
Atomic Layer Deposition of Ni Thin Films and Application to Area-Selective Deposition
Authors
Kim, WHLee, HBR김형준Kim, HHeo, JHong, SKim, CGChung, TMLee, YKHeo, K
Publisher
ELECTROCHEMICAL SOC INC
Abstract
Ni thin films were deposited by atomic layer deposition (ALD) using bis(dimethylamino-2-methyl-2-butoxo)nickel [Ni(dmamb)(2)] as a precursor and NH3 gas as a reactant. The growth characteristics and film properties of ALD Ni were investigated. Low-resistivity films were deposited on Si and SiO2 substrates, producing high-purity Ni films with a small amount of oxygen and negligible amounts of nitrogen and carbon. Additionally, ALD Ni showed excellent conformality in nanoscale via holes. Utilizing this conformality, Ni/Si core/shell nanowires with uniform diameters were fabricated. By combining ALD Ni with octadecyltrichlorosilane (OTS) self-assembled monolayer as a blocking layer, area-selective ALD was conducted for selective deposition of Ni films. When performed on the prepatterned OTS substrate, the Ni films were selectively coated only on OTS-free regions, building up Ni line patterns with 3 mu m width. Electrical measurement results showed that all of the Ni lines were electrically isolated, also indicating the selective Ni deposition. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3504196] All rights reserved.
Keywords
MONOLAYER RESISTS; NICKEL SILICIDE; GATE; METAL; OXIDE
URI
http://oasis.postech.ac.kr/handle/2014.oak/11189
DOI
10.1149/1.3504196
ISSN
0013-4651
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