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Effect of high-temperature annealing on deep levels in thin silicon-on-insulator layers separated by implanted oxygen

Title
Effect of high-temperature annealing on deep levels in thin silicon-on-insulator layers separated by implanted oxygen
Authors
Kang, BKKang, HSAhn, CGKwon, YK
POSTECH Authors
Kang, BK
Date Issued
Jan-1999
Publisher
ELECTROCHEMICAL SOC INC
URI
http://oasis.postech.ac.kr/handle/2014.oak/11090
ISSN
0013-4651
Article Type
Article
Citation
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 146, no. 9, page. 3489 - 3493, 1999-01
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 KANG, BONG KOO
Dept of Electrical Enginrg
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