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Cited 8 time in webofscience Cited 12 time in scopus
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Growth and characterization of SiC epitaxial layers on Si- and C-face 4H SiC substrates by chemical-vapor deposition

Title
Growth and characterization of SiC epitaxial layers on Si- and C-face 4H SiC substrates by chemical-vapor deposition
Authors
Ramaiah, KSBhat, IChow, TPKim, JKSchubert, EFJohnstone, DAkarca-Biyikli, S
POSTECH Authors
Kim, JK
Date Issued
Nov-2005
Publisher
AMER INST PHYSICS
URI
http://oasis.postech.ac.kr/handle/2014.oak/10554
DOI
10.1063/1.2132520
ISSN
0021-8979
Article Type
Article
Citation
JOURNAL OF APPLIED PHYSICS, vol. 98, no. 10, 2005-11
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 KIM, JONG KYU
Dept of Materials Science & Enginrg
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