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Bifunctional silver-doped ZnO for reliable and stable organic− inorganic hybrid perovskite memory

Title
Bifunctional silver-doped ZnO for reliable and stable organic− inorganic hybrid perovskite memory
Authors
PARK, YOUNG JUNLee, J.-S.
Date Issued
Jan-2021
Publisher
American Chemical Society
Abstract
Halide perovskites (HPs) have possible uses as an active layer for emerging memory devices due to their low operation voltage and high on/off ratio. However, HP-based memory devices, which are operated by the formation of a conductive filament, still suffer from reliability issues such as limited endurance and stability. To solve the problems, it is essential to control filament formation in the active layer. Here, we present nanoscale HP-based memory devices that have a Ag-doped ZnO (AZO) layer on HP. The AZO layer is used as a Ag ion reservoir for filament formation in HP, and this reservoir enables control of filament formation. By adjusting the Ag concentration in the AZO layer, the controlled filament composed of Ag can be formed; as a result, the memory device has excellent endurance (3 × 104 cycles) compared to the device that uses a Ag electrode instead of an AZO layer (4 × 102 cycles). Also, an AZO layer can passivate HP, so the device operates stably in ambient air for 15 days with a high on/off ratio (106). These results demonstrate that the introduction of the AZO layer can improve the reliability of HP-based memory devices for high-density applications. © XXXX American Chemical Society
URI
http://oasis.postech.ac.kr/handle/2014.oak/105043
ISSN
1944-8244
Article Type
Article
Citation
ACS Applied Materials and Interfaces, vol. 13, no. 1, 2021-01
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이장식LEE, JANG SIK
Dept of Materials Science & Enginrg
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