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Room-temperature ohmic contact on AlGaN/GaN heterostructure with surface treatment using N-2 inductively coupled plasma

Title
Room-temperature ohmic contact on AlGaN/GaN heterostructure with surface treatment using N-2 inductively coupled plasma
Authors
Jeon, CMJang, HWChoi, KJBae, SBLee, JHLee, JL
POSTECH Authors
Lee, JL
Date Issued
Jan-2002
Publisher
ELECTROCHEMICAL SOC INC
URI
http://oasis.postech.ac.kr/handle/2014.oak/10104
DOI
10.1149/1.1479296
ISSN
1099-0062
Article Type
Article
Citation
ELECTROCHEMICAL AND SOLID STATE LETTERS, vol. 5, no. 7, 2002-01
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 LEE, JONG LAM
Dept of Materials Science & Enginrg
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