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Effect of nitrogen doping on variability of TaOx-RRAM for low-power 3-bit MLC applications

Title
Effect of nitrogen doping on variability of TaOx-RRAM for low-power 3-bit MLC applications
Authors
Misha, SHTamanna, NWoo, JLee, SSong, JPark, JLim, SPark, JHwang, H
POSTECH Authors
Hwang, H
Date Issued
Jan-2015
Publisher
The Electrochemical Society
URI
http://oasis.postech.ac.kr/handle/2014.oak/10092
DOI
10.1149/2.0011504SS1
ISSN
2162-8742
Article Type
Article
Citation
ECS Solid State Letters, vol. 4, no. 3, page. 25 - 28, 2015-01
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 HWANG, HYUNSANG
Dept of Materials Science & Enginrg
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