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Cited 16 time in webofscience Cited 3 time in scopus
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Effects of Ti Buffer Layer on Retention and Electrical Characteristics of Cu-Based Conductive-Bridge Random Access Memory (CBRAM)

Title
Effects of Ti Buffer Layer on Retention and Electrical Characteristics of Cu-Based Conductive-Bridge Random Access Memory (CBRAM)
Authors
Attarimashalkoubeh, BPrakash, ALee, SSong, JWoo, JMisha, SHTamanna, NHwang, H
POSTECH Authors
Hwang, H
Date Issued
Jan-2014
Publisher
ELECTROCHEMICAL SOC INC
URI
http://oasis.postech.ac.kr/handle/2014.oak/10089
DOI
10.1149/2.0031410SSL
ISSN
2162-8742
Article Type
Article
Citation
ECS SOLID STATE LETTERS, vol. 3, no. 10, page. P120 - P122, 2014-01
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 HWANG, HYUNSANG
Dept of Materials Science & Enginrg
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