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Investigation of Low Temperature Plasma Using Hybrid Simulator Combined Fluid and Particle Methods

Investigation of Low Temperature Plasma Using Hybrid Simulator Combined Fluid and Particle Methods
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Low temperature plasma at low pressure is widely used for material etching, deposition and surface processing. Semiconductor industries also utilize capacitively coupled plasma (CCP) which is sustained by input power coupled as capacitively for the etching and deposition process. To verify the status of CCP, experimental and numerical methods are used. According to the information obtained from these two methods we can make a specific plasma condition depending on the object. Among the plasma properties, ion energy distribution function (IEDF) and ion angle distribution function (IADF) at the substrate play significant roles in control the etch rate and feature profile of trench. Our works determine the IEDF and other plasma properties by using hybrid simulation. Hybrid code is a fluid module combined with ion Monte-Carlo module at the sheath region to obtain the IEDF and IADF at the substrate. Usually in the fluid module we assumed that electron energy distribution is Maxwellian. However at low pressure this assumption is invalid and a transition of electron energy distribution occurs. To overcome these limitations, we used the electron Monte-Carlo collision module (EMCM) to consider a non-local effect. Finally we coupled these three modules which are fluid, ion MCC and EMCM. Hybrid simulator was verified as compare with published paper and we also compared our hybrid code outputs with the particle-in-cell method results to study characteristics of CCP.
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