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dc.contributor.authorBAEK, ROCK HYUN-
dc.contributor.authorCHOI, KYEONG KEUN-
dc.contributor.authorKANG, BOHYEON-
dc.contributor.authorANJEHYUN-
dc.date.available2020-01-06T04:50:23Z-
dc.date.created2020-01-06-
dc.date.issued2020-02-14-
dc.identifier.urihttp://oasis.postech.ac.kr/handle/2014.oak/100683-
dc.publisher제 27회 반도체학술대회-
dc.relation.ispartof제 27회 반도체학술대회-
dc.titleDefect Curing Effects on High-k Gate Stack (Al/Al2O3/Si-sub) by Using H2 Plasma Treatment and Rapid Thermal Anneal-
dc.typeConference-
dc.type.rimsCONF-
dc.identifier.bibliographicCitation제 27회 반도체학술대회-
dc.citation.conferenceDate2020-02-12-
dc.citation.conferencePlaceKO-
dc.citation.title제 27회 반도체학술대회-
dc.contributor.affiliatedAuthorBAEK, ROCK HYUN-
dc.contributor.affiliatedAuthorCHOI, KYEONG KEUN-
dc.contributor.affiliatedAuthorKANG, BOHYEON-
dc.contributor.affiliatedAuthorANJEHYUN-
dc.description.journalClass2-

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 BAEK, ROCK HYUN
Dept of Electrical Enginrg
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