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dc.contributor.authorBAEK, ROCK HYUN-
dc.contributor.authorJINSU, JEONG-
dc.contributor.authorYOON, JUN SIK-
dc.contributor.authorSEUNGHWAN, LEE-
dc.date.available2020-01-06T02:50:20Z-
dc.date.created2020-01-06-
dc.date.issued2020-08-
dc.identifier.issn1533-4880-
dc.identifier.urihttp://oasis.postech.ac.kr/handle/2014.oak/100678-
dc.description.abstractIn this paper, we investigated the threshold voltage (V th) variations in sub 5-nm node silicon nanosheet FETs (NSFETs) caused by Ge and C diffusion into NS channels using fully-calibrated 3-D TCAD simulation. Ge (C) atoms of Si1−x Ge x (Si1−x Cx) source/drain (S/D) diffuse toward the NS channels in lateral direction in p-type (n-type) FETs, and Ge atoms of Si0.7Ge0.3 stacks diffuse toward the NS channels in vertical direction. Increasing Ge mole fraction of the Si1−x Ge x S/D in the p-type FETs (PFETs) causing increasing compressive channel stress retards boron dopants diffusing from the Si1−x Ge x S/D into the NS channels, thus increasing the V th of PFETs (V th, p). However, the V th, p decreases as the Ge mole fraction of the Si1−x Ge x S/D becomes greater than 0.5 due to the higher valence band energy (E v) of the NS channels. On the other hand, the V th of n-type FETs (NFETs) (V th, n) consistently increases as the C mole fraction of the Si1−x Cx S/D increases due to monotonously retarded phosphorus dopants diffusing from the Si1−x Cx S/D into the NS channels. On the other hand, the V th, p and V th, n consistently decreases and increases, respectively, as Si/Si0.7Ge0.3 intermixing becomes severer because both E v and conduction band energies (E c) of the NS channels become higher. In addition, the V th, p variations are more sensitive to the Si/Si0.7Ge0.3 intermixing than the V th, n variations because the Ge mole fraction in NS channels affects the E v remarkably rather than the E c. As a result, the Ge atoms diffusing toward the NS channels should be carefully considered more than the C diffusion toward the NS channels for fine V th variation optimization in sub 5-nm node NSFETs.-
dc.languageEnglish-
dc.publisherAMER SCIENTIFIC PUBLISHERS-
dc.titleThreshold Voltage Variations Induced by Si1−xGex and Si1−xCx of Sub 5-nm Node Silicon Nanosheet Field-Effect Transistors-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.bibliographicCitationJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.20, no.8, pp.4684 - 4689-
dc.identifier.wosid미등재-
dc.citation.endPage4689-
dc.citation.number8-
dc.citation.startPage4684-
dc.citation.titleJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY-
dc.citation.volume20-
dc.contributor.affiliatedAuthorBAEK, ROCK HYUN-
dc.contributor.affiliatedAuthorJINSU, JEONG-
dc.contributor.affiliatedAuthorYOON, JUN SIK-
dc.contributor.affiliatedAuthorSEUNGHWAN, LEE-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.type.docTypeArticle-

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