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Threshold Voltage Variations Induced by Si1−xGex and Si1−xCx of Sub 5-nm Node Silicon Nanosheet Field-Effect Transistors

Title
Threshold Voltage Variations Induced by Si1−xGex and Si1−xCx of Sub 5-nm Node Silicon Nanosheet Field-Effect Transistors
Authors
BAEK, ROCK HYUNJINSU, JEONGYOON, JUN SIKSEUNGHWAN, LEE
Date Issued
Aug-2020
Publisher
AMER SCIENTIFIC PUBLISHERS
Abstract
In this paper, we investigated the threshold voltage (V th) variations in sub 5-nm node silicon nanosheet FETs (NSFETs) caused by Ge and C diffusion into NS channels using fully-calibrated 3-D TCAD simulation. Ge (C) atoms of Si1−x Ge x (Si1−x Cx) source/drain (S/D) diffuse toward the NS channels in lateral direction in p-type (n-type) FETs, and Ge atoms of Si0.7Ge0.3 stacks diffuse toward the NS channels in vertical direction. Increasing Ge mole fraction of the Si1−x Ge x S/D in the p-type FETs (PFETs) causing increasing compressive channel stress retards boron dopants diffusing from the Si1−x Ge x S/D into the NS channels, thus increasing the V th of PFETs (V th, p). However, the V th, p decreases as the Ge mole fraction of the Si1−x Ge x S/D becomes greater than 0.5 due to the higher valence band energy (E v) of the NS channels. On the other hand, the V th of n-type FETs (NFETs) (V th, n) consistently increases as the C mole fraction of the Si1−x Cx S/D increases due to monotonously retarded phosphorus dopants diffusing from the Si1−x Cx S/D into the NS channels. On the other hand, the V th, p and V th, n consistently decreases and increases, respectively, as Si/Si0.7Ge0.3 intermixing becomes severer because both E v and conduction band energies (E c) of the NS channels become higher. In addition, the V th, p variations are more sensitive to the Si/Si0.7Ge0.3 intermixing than the V th, n variations because the Ge mole fraction in NS channels affects the E v remarkably rather than the E c. As a result, the Ge atoms diffusing toward the NS channels should be carefully considered more than the C diffusion toward the NS channels for fine V th variation optimization in sub 5-nm node NSFETs.
URI
http://oasis.postech.ac.kr/handle/2014.oak/100678
ISSN
1533-4880
Article Type
Article
Citation
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, vol. 20, no. 8, page. 4684 - 4689, 2020-08
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 BAEK, ROCK HYUN
Dept of Electrical Enginrg
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