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Observation of mobility and velocity behaviors in ultra-scaled L-G=15 nm silicon nanowire field-effect transistors with different channel diameters

Title
Observation of mobility and velocity behaviors in ultra-scaled L-G=15 nm silicon nanowire field-effect transistors with different channel diameters
Authors
BAEK, ROCK HYUNYOON, JUN SIKSEUNGHWAN, LEEJINSU, JEONGLEE, JUNJONG
Date Issued
Feb-2020
Publisher
PERGAMON-ELSEVIER SCIENCE LTD
Abstract
Experimentally, two critical device performance factors, apparent mobility (mu(app)) and virtual source velocity (v(x0)) were investigated down to effective channel length (L-eff) = 15 nm silicon nanowire field-effect transistors (SNWFETs) by using virtual source (VS) model. Both mu(app) and v(x0) decreased in n-SNWFETs but increased in p-SNWFETs as the nanowire diameter (D-NW) shrank because of opposite effective mass (m(eff)) dependency. The critical on-current booster, v(x0) rather than mu(app) increased monotonically as L-eff shrank, and it showed that v(x0) boosting by L-eff scaling is still valid to L-eff = 15 nm in SNWFETs. Furthermore, p-SNWFETs had higher mu(app) and v(x0) than n-SNWFETs because compressive stress from SiGe layer below source/drain improved the performance of p-SNWFETs. Interestingly, unpredicted non-linearity of L-eff/mu(app) vs. 1/v(x0) plot was observed in short channel p-SNWFETs and its origin was discussed. Finally, thermal limit velocity (v(Tx)) and ballistic efficiency (B-sat) consisting v(x0) were extracted from experimental data. The D-NW dependence of v(Tx) and B-sat was analyzed using stress effect, m(eff), critical length (L-C), and mean free path (lambda), which provides the way of v(x0) boosting.
Keywords
CARRIER TRANSPORT; SCATTERING; MOSFETS
URI
http://oasis.postech.ac.kr/handle/2014.oak/100675
ISSN
0038-1101
Article Type
Article
Citation
SOLID-STATE ELECTRONICS, vol. 164, 2020-02
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 BAEK, ROCK HYUN
Dept of Electrical Enginrg
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